University of Jordan: a breakthrough in room temperature monoelectronic storage

THE RESEARCH TEAM AT THE NATIONAL FOCUS LABORATORY FOR INTEGRATED CHIPS AND SYSTEMS AT THE UNIVERSITY OF JORDAN PUBLISHED HEAVY-POUND RESULTS IN SCIENCE MAGAZINE, WHICH SUCCEEDED IN BUILDING A COMMON LEAK-GUTTER-SOURCE “UNIT” STRUCTURE AND OBSERVED SINGLE-ELECTRONIC NON-VIABLE STORAGE AT ROOM TEMPERATURE (27°C) FOR THE FIRST TIME. THIS BREAKTHROUGH BROKE THE TRADITIONAL PERCEPTION THAT “SINGLE ELECTRONIC STORAGE” COULD NOT BE ACHIEVED AND LAID THE THEORETICAL FOUNDATION FOR THE ARITHMETICAL REVOLUTION OF THE AI ERA. THE TEAM PLANS TO LAND THE PRODUCT WITHIN THE NEXT ONE TO THREE YEARS BY SETTING UP A COMPANY TO CONNECT ARTIFICIAL INTELLECTUAL HEAD CUSTOMERS, INTRODUCING STRATEGIC PARTNERS AND PROMOTING THE TRANSFORMATION OF ORIGINAL INNOVATION INTO NEW QUALITY PRODUCTIVITY。