TRISTAR EXPLORATION OF NEW MEMORY TECHNOLOGIES: VERTICAL STACKING ABOVE THE AI ACCELERATOR 510 TIMES HIGHER THAN TRADITIONAL HBM

On 5 August, United States Eastern Time, Samsung Electronics launched its V10 Bonding V-NAND prototype at the Future Storage and Memory Congress (FMS) in Santa Clara, California. The chip has more than 400 layers of structure and uses a completely new crystallization structure to increase storage density and performance. Samsung indicated that its BV-NAND technology increased storage density by about 58 per cent over the previous generation of V9 NAND, while increasing reading, writing and input/output performance to meet the growing demand for higher-capacity and energy-efficient storage solutions in artificial intelligence systems. Samsung also presented a conceptual model of what it termed the industry ' s first zHBM and zNAND-O architecture. The technology stores more data in smaller spaces through vertical stacking of storage units. Unlike the traditional HBM-AI processor, a tristar zHBM will be stored. Straight stacks are stacked on the AI accelerator to reduce data transmission distance, increase bandwidth and increase energy efficiency. Samsung indicated that it is expected to achieve a storage density of 10 times more than the traditional HBM5 memory, while increasing energy efficiency three times and reducing heat resistance by more than half。